Program
Click here to get a pdf version of the block schedule
Click here to get a pdf version of the complete schedule
Click here to get a pdf version of the complete schedule
| Sunday 8/12/18 | |||
| Start time | Event | ||
| 5:00-7:30PM | Welcome Reception at the Blackwell Inn, Ballroom Section C & Patio |
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| Monday 8/13/18 | |||
| Start time | Event | ||
| 8:30 | Intro/welcome (Rajan, Fay) | ||
| 8:45 | Keynote (Leo Schowalter) | ||
| 9:30 | Keynote (Keisuke Shinohara) | ||
| 10:15 | Break | ||
| 10:30 | Session I - Power Devices | ||
| 12:30 | Lunch & Excursion | ||
| 4:30 | Transportation back to Columbus, OH | ||
| Tuesday 8/14/18 | |||
| Start time | Event | ||
| 8:30 | Session II - RF Devices | ||
| 11:00 | Break | ||
| 11:15 | Session IIIA - Materials | ||
| 12:15 | Lunch | ||
| 1:15 | Session IIIB - Materials | ||
| 3:00 | Break | ||
| 3:15 | Session IVA - Optoelectronics | ||
| 6:30 | Joint LEC/GOX Banquet | ||
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| Session details | ||
| Monday | ||
| Keynote Session | ||
| Start time | Author (lead) | Title |
| 8:45 | Leo Schowalter | Development of Pseudomorphic AlGaN/AlN Technology for Optoelectronic, Power, RF, and High Temperature Applications: the Better Wide Bandgap Semiconductor Technology |
| 9:30 | Keisuke Shinohara | Development of High-Power High-Linearity GaN BRIDGE FETs with Laterally Gated Multi-2DEG Channels |
| Start time | Author (lead) | Title |
| 10:30 | Andy Armstrong | Advances in Al-rich AlGaN transistors for power switching and UV photodetection |
| 11:00 | Grigory Simin | High-Al AlxGa1-xN Channel HEMTs over thick AlN/Sapphire Templates |
| 11:15 | Matthew Peart | AlInN for Vertical Power Electronic Devices |
| 11:30 | Grigory Simin | Al0.65Ga0.35N/Al0.40Ga0.60N HEMTs with insulating oxide-gates |
| 11:45 | Jaeyi Chun | Demonstration of GaN Static Induction Transistor with Ron < 2 mOhm-cm2 |
| 12:00 | Vishank Talesara | Thermal Management of High Power SiC MOSFETs using Graphene Nanomaterial |
| 12:15 | Wu Lu | High-Current Perovskite Oxide BaTiO3/BaSnO3 Heterostructure Transistors |
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| Tuesday | ||
| Session II - RF Devices | ||
| Start time | Author (lead) | Title |
| 8:30 | Jeong Moon | GaN HEMT: Efficiency vs Linearity |
| 9:00 | Shahadat Sohel | Polarization Engineering of AlGaN/GaN HEMT with Graded InGaN Sub-channel for High Linearity X-band Applications |
| 9:15 | Brian Romanczyk | Temperature-Independent Small-Signal Behavior of mm-Wave N-Polar GaN Deep Recess HEMTs |
| 9:30 | Shuoqi Chen | Qorvo's GaN09 Technology for V-band and W-band Applications |
| 9:45 | David Meyer | Micro-Transfer Printing of GaN HEMTs to Alternative Substrates |
| 10:15 | Yusuke Kumazaki | Improved Device Performance in InAlGaN/GaN HEMTs by Pit-Assisted Ohmic Contact |
| 10:30 | Sandeep kumar | Investigation of Ta2O5 as a promising high k dielectric for InAlN/GaN-on-Si HEMT |
| 10:45 | Yihao Fang | 90nm Emitter Width InGaAs/InP DHBTs with DC Current Gain beta > 40 |
| Session IIIA/B - Materials and Circuits | ||
| Start time | Author (lead) | Title |
| 11:15 | Mathias Schubert | Unraveling physics and material properties of semiconductors with monoclinic crystal symmetry |
| 11:45 | Uttam Singisetti | Low-field and high field transport in monoclininc beta-Ga2O3 |
| 1:15 | Yuewei Zhang | Evaluation of Saturation Velocity in β-(AlxGa1-x)2O3/Ga2O3 Modulation-doped Field Effect Transistors |
| 1:30 | Christian Robertson | Dislocation Assisted Carrier Transport Mechanism in GaN Bipolar Devices Leakage |
| 1:45 | Esmat Farzana | Investigation of Neutron Irradiation on Deep Levels in beta-Ga2O3 |
| 2:00 | Morteza Monavarian | High-voltage regrown nonpolar m-plane vertical GaN p-n diodes for selective-area doped power switches |
| 2:15 | Hongping Zhao | Low pressure chemical vapor deposition of In2O3 on yttria stabilized zirconia substrates |
| 2:30 | Yasuyuki Miyamoto | Multi-level inverter toward GaN HEMT monolithic integrated circuit |
| 2:45 | Yu Shi | width=732>An Integrated Polarization-Resolved Quasi-Optical THz Detector Based on Heterostructure Backward Diodes |
| Session IV - Optoelectronics | ||
| Start time | Author (lead) | Title |
| 3:15 | Hongxing Jiang | MicroLEDs and displays |
| 3:45 | Takayoshi Oshima | High voltage operation of Ga2O3 MOS photodiodes |
| 4:15 | Arman Rashidi | Exclusion of injection efficiency as the primary cause of efficiency droop in InGaN/GaN light-emitting diodes |
| 4:30 | Ashwin Rishinaramangalam | Lasing Suppression in Nonpolar GaN-based Superluminescent Diodes via Cavity Design Optimization |
| 4:45 | James Gallagher | Fabrication and Evaluation of GaN-Based Photoconductive Semiconductor Switches |
| 5:00 | Sadhvikas Addamane | Development of novel semiconductor saturable absorber mirrors (SESAMs) for passively mode-locked optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) |
| 5:15 | Zhenqiang Ma | UVC LEDs with Silicon as Hole Injector |
| 5:30 | Daniel Feezell | High-Speed Nonpolar and Semipolar Light-Emitting Diodes for Visible-Light Communication |
Chair: Siddharth Rajan, Ohio State University
Program Chair: Patrick Fay, University of Notre Dame
Technical Program Committee
Andrea Corrion, HRL Labs
Daniel Feezell, University of New Mexico
Dave Meyer, Naval Research Laboratory
Gregg Jessen, Air Force Research Laboratory
Han Wang, University of Southern California
Jon Wierer, Lehigh University
Leo Schowalter, Crystal IS
Hongping Zhao, Ohio State University
Keisuke Shinohara, Teledyne
Marty Chumbes, Raytheon
Robert Kaplan, Sandia National Laboratory
Rongming Chu, HRL Labs
Srabanti Chowdhury, UC Davis
Subramaniam Arulkumaran, NTU Singapore
Tetsuya Takeuchi, Meijo University
Travis Anderson, Naval Research Laboratory
Xiuling Li, University of Illinois, Urbana-Champaign
Yasuyuki Minamoto, Tokyo Institute of Technology
Yu Cao, Qorvo
Program Chair: Patrick Fay, University of Notre Dame
Technical Program Committee
Andrea Corrion, HRL Labs
Daniel Feezell, University of New Mexico
Dave Meyer, Naval Research Laboratory
Gregg Jessen, Air Force Research Laboratory
Han Wang, University of Southern California
Jon Wierer, Lehigh University
Leo Schowalter, Crystal IS
Hongping Zhao, Ohio State University
Keisuke Shinohara, Teledyne
Marty Chumbes, Raytheon
Robert Kaplan, Sandia National Laboratory
Rongming Chu, HRL Labs
Srabanti Chowdhury, UC Davis
Subramaniam Arulkumaran, NTU Singapore
Tetsuya Takeuchi, Meijo University
Travis Anderson, Naval Research Laboratory
Xiuling Li, University of Illinois, Urbana-Champaign
Yasuyuki Minamoto, Tokyo Institute of Technology
Yu Cao, Qorvo
Invited Speakers
Keynote Speakers
Keisuke Shinohara, Teledyne: New Materials & Device Architectures For High-Linearity High-Power RF Transistors
Leo Schowalter, Crystal IS: Development of Pseudomorphic AlGaN/AlN Technology for Optoelectronic, Power, RF, and High Temperature Applications: the Better Wide Bandgap Semiconductor Technology
Invited Speakers
Jeong Moon, HRL Laboratories: GaN HEMT: Efficiency vs Linearity
Andrew Armstrong, Sandia National Laboratories: Advances in Al-rich AlGaN transistors for power switching and UV photodetection
David Meyer, Naval Research Laboratory: Micro-Transfer Printing of GaN HEMTs to Alternative Substrates
Mathias Schubert, University of Nevada, Lincoln: Unraveling physics and material properties of semiconductors with monoclinic crystal symmetry
Hongxing Jiang, Texas Tech University: MicroLEDs and displays
Takayoshi Oshima, Saga University: High voltage operation of Ga2O3 MOS photodiodes
Uttam Singisetti, SUNY Buffalo: Low-field and high field transport in monoclininc beta-Ga2O3
Danny Feezell, University of New Mexico: High-Speed Nonpolar and Semipolar Light-Emitting Diodes for Visible-Light Communication
Keisuke Shinohara, Teledyne: New Materials & Device Architectures For High-Linearity High-Power RF Transistors
Leo Schowalter, Crystal IS: Development of Pseudomorphic AlGaN/AlN Technology for Optoelectronic, Power, RF, and High Temperature Applications: the Better Wide Bandgap Semiconductor Technology
Invited Speakers
Jeong Moon, HRL Laboratories: GaN HEMT: Efficiency vs Linearity
Andrew Armstrong, Sandia National Laboratories: Advances in Al-rich AlGaN transistors for power switching and UV photodetection
David Meyer, Naval Research Laboratory: Micro-Transfer Printing of GaN HEMTs to Alternative Substrates
Mathias Schubert, University of Nevada, Lincoln: Unraveling physics and material properties of semiconductors with monoclinic crystal symmetry
Hongxing Jiang, Texas Tech University: MicroLEDs and displays
Takayoshi Oshima, Saga University: High voltage operation of Ga2O3 MOS photodiodes
Uttam Singisetti, SUNY Buffalo: Low-field and high field transport in monoclininc beta-Ga2O3
Danny Feezell, University of New Mexico: High-Speed Nonpolar and Semipolar Light-Emitting Diodes for Visible-Light Communication
Abstracts Due: May 25th, 2018 - Extended to June 7th, 2018!
We are pleased to announce the call for papers for the 2018 Les Eastman Conference on High Performance Devices. Research abstracts that emphasize innovative device concepts and physical phenomena leading to new devices are particularly encouraged. Abstracts should state the purpose of the work, specific results, and how high performance device technology is advanced. Papers are solicited in the area of wide-band gap semiconductor devices, including but not limited to, the following areas:
Sample Abstracts :
56.pdf 48.pdf
To encourage open exchange of information and prevent interference with future publications, LEC conference abstracts will not be published and no proceedings papers will be solicited.
We are pleased to announce the call for papers for the 2018 Les Eastman Conference on High Performance Devices. Research abstracts that emphasize innovative device concepts and physical phenomena leading to new devices are particularly encouraged. Abstracts should state the purpose of the work, specific results, and how high performance device technology is advanced. Papers are solicited in the area of wide-band gap semiconductor devices, including but not limited to, the following areas:
- High frequency devices: RF, microwave, and millimeter-wave transistors, diodes and detectors, and other novel high-frequency concepts; novel fabrication or device technologies for improved performance (electrical, thermal, etc.)
- Power switching and energy-efficient devices: high power and high voltage transistors, diodes, and other components for power conversion and control applications, including advanced processing and device design
- Optoelectronic devices: wide band gap emitters and detectors, including lasers, avalanche photodiodes, optical thyristors, and other optoelectronic device concepts
Sample Abstracts :
56.pdf 48.pdf
To encourage open exchange of information and prevent interference with future publications, LEC conference abstracts will not be published and no proceedings papers will be solicited.
Abstract Submission
Regular abstract submission is now closed.
About Les Eastman Conference
The Lester Eastman Conference on High Performance Devices is a biennial conference that has its origins over 50 years ago. In 1967, Professor Eastman originated the biennial IEEE-Cornell Conference in Microwave Semiconductors, which then became the IEEE-Cornell Conference on High Performance Devices. It was officially renamed in 2002 as the Lester Eastman Conference on High Performance Devices. Some of the legendary contributions from the Eastman group include high quality GaAs epitaxy, delta-doping, the first lattice-matched InGaAs channel HEMT, T-gate, ballistic devices and polarization effects in GaN.
Steering Committee (past conference chairs since 2000)
Grace Huili Xing
PC Chao
Leo Showalter
Paul Chow
Mike Wraback
Greg DeSalvo
Michael Shur
James Kolodzey
John Zolper
Leda Lunardi
Chris Clarke
Steering Committee (past conference chairs since 2000)
Grace Huili Xing
PC Chao
Leo Showalter
Paul Chow
Mike Wraback
Greg DeSalvo
Michael Shur
James Kolodzey
John Zolper
Leda Lunardi
Chris Clarke
